Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing
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概要
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To investigate the origin of the large UV sensitivity of SiON film, we measureed the Fourier transform infrared (FT-IR) spectrum of SiON films before and after UV exposure, and also before and after thermal annealing. As a result, we discovered the reversal of the UV sensitivity of SiON film treated by thermal annealing at 1160 °C. Next, the origin of the reversal of UV sensitivity induced by thermal annealing was studied by positron annihilation lifetime spectroscopy (PALS) measurement. The redshift trimming of a microring resonator with a SiON core and the improvement of a double series coupled microring resonator by selective UV trimming were successfully demonstrated using this phenomenon.
- 2006-11-15
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Ueno Satoshi
Yokohama National Univ. Yokohama Jpn
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Kokubun Yasuo
Yokohama National Univ. Yokohama Jpn
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Shioya Yoshimi
Semiconductor Process Laboratory Co. Ltd.
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Ueno Satoshi
Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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Tatewaki Takashi
Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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Shioya Yoshimi
Semiconductor Process Laboratory Co., Ltd., Apex Bldg. 4F, 717-30 Futamata, Ichikawa, Chiba 272-0001, Japan
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Kokubun Yasuo
Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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