Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
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概要
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Gate oxide layers grown by dry and wet oxidation on 4H-SiC C($000\bar{1}$)- and Si(0001)-faces have been measured by positron annihilation spectroscopy. The incident positron energy, which corresponds to the peak of Doppler-broadening $W$-parameter curves, was chosen to characterize the SiC/oxide interfaces. Positron trapping sites with lifetimes in the range of 0.16–0.32 ns were detected, and the lifetimes for the C($000\bar{1}$) face were longer than those for the Si(0001) face. Age–momentum correlation measurements revealed that the origin of these trapping sites is neither the SiC bulk nor the SiC vacancies, suggesting that defective oxide layers exist at the interface.
- 2008-11-25
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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TANAKA Yasunori
National Institute of Advanced Industrial Science and Technology (AIST)
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Harada Shinsuke
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center:u
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FUKUDA Kenji
National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
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OSHIMA Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST)
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Kinomura Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kato Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kinoshita Akimasa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Oshima Nagayasu
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fukuda Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Harada Shinsuke
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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