Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

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概要

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• Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and fabricate model SiC schotky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 °C and 800 °C due to avoiding the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed "SP-D1000" produced by Toray Industries, Inc.. We demonstrated to fabricate the model SiC-SBDs devices based on our proposal process with "SP-D1000" and confirmed the device working as same as a current process.

• The Society of Photopolymer Science and Technology (SPST)の論文

著者

• Okumura Hajime

  National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn

• Fukuda Kenji

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Imai Tomohiro

  National Institute of Advanced Industrial Science and Technology AIST

• Tanigaki Yugo

  Toray Industries Inc.

• Gotoh Masahide

  National Institute of Advanced Industrial Science and Technology AIST

• Fujiwara Takanori

  Toray Industries Inc.

• Furukawa Yukihiro

  ULVAC Inc.

• Tonari Kazuhiro

  ULVAC Inc.

• Otsuki Akihiro

  Fuji Electric Co.,Ltd,

• Oose Naoyuki

  National Institute of Advanced Industrial Science and Technology AIST

• Utsumi Makoto

  National Institute of Advanced Industrial Science and Technology AIST

• Ryo Mina

  National Institute of Advanced Industrial Science and Technology AIST

• Nakamata Shinichi

  National Institute of Advanced Industrial Science and Technology AIST

• Sakai Takao

  National Institute of Advanced Industrial Science and Technology AIST

• Sakai Yoshiyuki

  National Institute of Advanced Industrial Science and Technology AIST

• Miyajima Masaaki

  National Institute of Advanced Industrial Science and Technology AIST

• Kumura Hiroshi

  National Institute of Advanced Industrial Science and Technology AIST

• Fukuda Kenji

  National Institute of Advanced Industrial Science and Technology AIST

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• Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

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