Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
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概要
- 論文の詳細を見る
We attempted a new ohmic contact process for two-step metallization, and demonstrated improvement of the ohmic properties and device characteristics. The contact resistance of the two-step ohmic process was improved from 4.2 $\Omega$mm obtained in a conventional contact to 2.6 $\Omega$mm. The specific contact resistivity of the transmission line method ohmic contacts improved by one order of magnitude, from 10-4 $\Omega$-cm2 in the conventional contact sample to $10^{-5}$ $\Omega$-cm2 in the two-step contact sample treated with Cl2 plasma. The dc measurements of the HFETs showed improved current-voltage curves in the two-step contact samples. The values of $R_{\text{on}}$ of the AlGaN/GaN HFET with the two-step contact process and the conventional HFET were calculated to be 0.23 m$\Omega$-cm2 and 0.28 m$\Omega$-cm2 in the linear (ohmic) region, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIM Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST)
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Cho Dong-Hyun
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shim Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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