IDE Toshihide | National Institute of Advanced Industrial Science and Technology (AIST)
スポンサーリンク
概要
関連著者
-
SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
-
IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
-
Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
-
SHIM Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST)
-
Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
-
Sazawa Hiroyuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
Yamamoto Taiki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
Nishikawa Naohiro
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
Kiuchi Maki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
-
Inoue Takayuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
-
Hata Masahiko
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
-
Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
-
SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
-
Cho Dong-hyun
National Institute Of Advanced Industrial Science And Technology (aist)
-
Shimizu M
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
-
Hata Masahiko
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
-
Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Cho Dong-Hyun
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Ide Toshihide
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
-
Takahashi Tokio
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Kawashima Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Shim Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition
- Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition