Okita Hideyuki | Department Of Electrical Engineering Science University Of Tokyo
スポンサーリンク
概要
関連著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
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Shimizu M
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIM Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIM Byung-Rho
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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OKITA Hideyuki
Department of Electrical Engineering, Science University of Tokyo
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Cho Dong-hyun
National Institute Of Advanced Industrial Science And Technology (aist)
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Jeganathan Kulandaivel
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shim Byoung-Rho
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Okita Hideyuki
Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Jeganathan Kulandaivel
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Structural Properties of GaN Film with AIN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
- Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy