Okumura Hajime | Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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概要
- Okumura Hajimeの詳細を見る
- 同名の論文著者
- Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
関連著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
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Jeganathan Kulandaivel
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Shim Byoung-Rho
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ohashi Hiromichi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yagi Shuichi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Okita Hideyuki
Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Jeganathan Kulandaivel
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yano Yoshiki
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
著作論文
- Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
- High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator