High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

概要

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We report the fabrication of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a high breakdown voltage by employing a metal–insulator–semiconductor (MIS) gate structure using TiO2/SiN insulators. We employed the TiO2/SiN gate insulator for the first time in a multilayered insulator structure MIS-HEMT. The gate leakage current was significantly reduced by employing the MIS structure, and the breakdown voltage characteristics of the fabricated MIS-HEMTs were 1.1 kV with an on-resistance of 15 m$\Omega$ cm2 for a gate-drain length of $L_{\text{gd}} = 28$ μm. The current collapse in the TiO2/SiN MIS-HEMT has been improved by employing a thin SiN film under the TiO2 insulator. AlGaN/GaN MIS-HEMTs are promising not only for high-speed applications but also for high-power switching applications.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-04-30