MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
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概要
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シード核を用いた二段階MOCVD法によってPt/SiO_2/Si上に基板温度395℃でペロブスカイトPb(Zr,Ti)O_3(PZT)薄膜が得られた。我々のMOCVDでは、PZT薄膜堆積前にPbTiO_3(PTO)もしくはPZTをシード核として堆積させた。シード核を10〜20秒堆積させたPZT薄膜は核付けを行わなかったものに比べて良好な結晶性及び強誘電特性を示した。核付けを行ったPZT薄膜の2Prの値は13〜17μC/cm^2であった。核を40秒以上堆積させた場合、2Prの値は17から12μC/cm^2に減少した。
- 2002-03-07
著者
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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岡庭 守
姫路工業大学大学院工学研究科
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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岡庭 守
姫路工業大学工学部電子工学科
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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藤沢 浩訓
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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