Mitsugi Satoshi | Precision And Intelligence Laboratory Tokyo Institute Of Technology
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概要
関連著者
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu M
Tokyo Inst. Technology Yokohama
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Fujisawa Hironori
Graduate School Of Engineering University Of Hyogo
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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舟窪 浩
東京工業大学大学院 総合理工学研究科 物質科学創造専攻
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
兵庫県立大学大学院 工学研究科
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FUJISAWA Hironori
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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SHIMIZU Masaru
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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MITSUGI Satoshi
NTT Basic Research Laboratories, NTT Corp.
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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藤沢 浩訓
兵庫県立大学大学院 工学研究科
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岡庭 守
姫路工業大学大学院工学研究科
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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本田 耕一郎
富士通研究所
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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本田 耕一郎
富士通研
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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Niu Hirohiko
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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IDE Toshihide
Department of Electronics and Communications, School of Science and Technology, Meiji University
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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野々村 哉
姫路工業大学大学院工学研究科電気系工学専攻
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野々村 哉
姫路工業大学大学院工学研究科 電気系工学専攻
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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NEMOTO Toshio
Department of Electronics and Communications, School of Science and Technology, Meiji University
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SHEN Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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TAKAHASHI Kenji
Department of Radiological Life Sciences, Hirosaki University Graduate School of Health Sciences
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Kato Junichi
Ntt Lsi Laboratories
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Kato Junichi
Ntt System Electronics Laboratories
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KOTAKA Yasutoshi
Fujitsu Laboratories Ltd.
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Suzuki Kazuhiro
Department of Earth and Environmental Sciences, Nagoya University
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HONDA Koichiro
Fujitsu Laboratories Ltd.
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藤沢 浩訓
姫路工大・工学研究科
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清水 勝
姫路工大・工学研究科
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Katoda Takashi
Dep. Of Electronic And Photonic Systems Engineering Kochi Univ. Of Technol.
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Kato J
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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SAITO Keisuke
Application Laboratory
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Kato J
Ntt Lsi Laboratories
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Kim Y‐j
Tokai Univ. Shizuoka Jpn
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Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Honda Koichiro
Fujitsu Lab. Ltd. Kanagawa Jpn
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Honda K
Fujitsu Laboratories Ltd.
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Suzuki Kenji
Institute For Materials Research Laboratory Tohoku University
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KURIHARA Kenji
NTT LSI Laboratories
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Suzuki K
Central Research Laboratory Alps Electric Co. Ltd.
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Suzuki Kenshu
Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine
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Cho D‐h
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OHASHI Hiromichi
National Institute of Advanced Industrial Science and Technology
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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HIRATA Yoshitaka
Department of Science and Technology, Graduated School of Meiji University
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PIAO Guanxi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SUZUKI Akira
Graduate School of Engineering, Tokai University
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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MATSUTANI Akihiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MUKAIHARA Toshikazu
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Kim Young-Joo
Department of Agricultural Engineering, Chonbuk National University
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Takahashi Kenji
Department Of Orthopaedics Graduate School Of Medical Science Kyoto Prefectural University Of Medici
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Kajiwara Ken
Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi
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Kurihara Kazuaki
Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Kurihara Kazuaki
Fujitsu Laboratories Inorganic Materials & Polymers Laboratory
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Tsuchizawa Tai
Ntt Telecommunications Energy Laboratories
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TAKANO Mikio
Institute for Chemical Research, Kyoto University
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SHIMIZU Masafumi
Department of Chemistry,Faculty of Science,Kyoto University
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AZUMA Masaki
Institute for Chemical Research, Kyoto University
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SHIMAKAWA Yuichi
Institute for Chemical Research, Kyoto University
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渡辺 和人
都立産技高専
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山崎 貴司
富士通研究所
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小高 康稔
富士通研究所
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Matsuura Osamu
Department Of Urology Shakai Hoken Chukyo Hospital
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Matsuura Osamu
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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KURI Ryohei
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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山崎 貴司
東理大理
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渡辺 和人
産業技術高専
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藤沢 浩訓
兵庫県大
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清水 勝
兵庫県大
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻
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NONOMURA Hajime
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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丹生 博彦
姫路工大・工学研究科
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小高 康稔
東大工
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Tsuchizawa Tai
Ntt Microsystem Integration Labs.
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HONDA Kazutaka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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NAKANO Yoshiaki
Department of Surgery, NTT West Osaka Hospital
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WATANABE Toshifumi
NTT Microsystem Integration Labs.
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YAMADA Koji
NTT Microsystem Integration Labs.
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八木 達也
姫路工業大学大学院工学研究科電気系工学
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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Mitsui T
Crest Japan Science And Technology Agency:japan Atomic Energy Agency
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Kim Y‐j
Department Of Information & Communication Technology Tokai University
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Hara S
Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P
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Kuri Ryohei
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Takano M
Institute For Chemical Research Kyoto University
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Takano Mikio
Institute For Integrated Cell-material Sciences Kyoto University
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Takano Mikio
Institute For Chemical Research (icr) Kyoto University
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Tsuchizawa T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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NOTOMI Masaya
NTT Basic Research Laboratories, NTT Corp.
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SHINYA Akihiko
NTT Basic Research Laboratories, NTT Corp.
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KURAMOCHI Eiichi
NTT Basic Research Laboratories, NTT Corp.
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RYU Han-Youl
NTT Basic Research Laboratories, NTT Corp.
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KAWABATA Tatsuro
NTT Basic Research Laboratories, NTT Corp.
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SHOJI Tetsufumi
NTT Microsystem Integration Laboratories, NTT Corp.
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OIKAWA Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Ye Shu-ying
Department Of Information & Communication Technology Tokai University
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MIZUMOTO Tetsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FUTAKUCHI Naoki
Department of Electronic Engineering, University of Tokyo
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Azuma M
Institute For Chemical Research Kyoto University
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Azuma Masaki
Institute For Chemical Research Kyoto University
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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KANEKO Satoru
Kanagawa Industrial Technology Research Institute
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SAKAMA Hiroshi
Department of Applied Physics, The University of Tokyo
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HARA Shinji
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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CHO Dong-Hyun
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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JEGANATHAN Kulandaivel
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHEN Xu-Qiang
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OOKITA Hideyuki
Science University of Tokyo
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ICHIKAWA Noriya
Department of Physics, Sophia University
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ARAI Masaya
Department of Physics, Sophia University
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IMAI Yusuke
Department of Physics, Sophia University
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HAGIWARA Kei
Department of Physics, Sophia University
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YONETANI Masashi
Graduate School of Engineering, University of Hyogo
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FUJISAWA Hironori
Graduate School of Engineering, University of Hyogo
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SHIMIZU Masaru
Graduate School of Engineering, University of Hyogo
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ISHIKAWA Kenya
Research Institute of Electrical Communication, Tohoku University
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CHO Yasuo
Research Institute of Electrical Communication, Tohoku University
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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YAMAMOTO Yuki
National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
National Institute of Advanced Industrial Science and Technology
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YAGI Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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INADA Masaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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PIAO Guanxi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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ARAI Kazuo
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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CHO Hyung-Koun
Department of Metallurgical Engineering, Dong-A University
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
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SHIMIZU Mitsuaki
Electrotechnical Laboratory (ETL)
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SHEN Xu-Qiang
Electrotechnical Laboratory (ETL)
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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SHIMIZU Mitsuaki
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Kato Junnichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Mukaihara Toshikazu
Precision & Intelligence Lab., Tokyo Institute of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MITSUGI Satoshi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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KATO Junichi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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MATSUTANI Akihiro
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Baba Toshihiko
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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MATSUZAKI Tomoaki
Department of Applied Chemistry Faculty of Engineering, Himeji Institute of Technology
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SAWADA Tatsuya
Department of Applied Chemistry Faculty of Engineering. Himeji Institute of Technology
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Shimakawa Yuichi
Institute For Chemical Research Kyoto University
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Ryu Han-youl
Ntt Basic Research Laboratories Ntt Corp.
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Notomi M
Ntt Basic Research Laboratories Ntt Corporation
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Notomi Masaya
Ntt Basic Research Laboratories
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Kuramochi Eiichi
Ntt Basic Research Laboratories Ntt Corporation
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Kuramochi Eiichi
The Author Is With Ntt Basic Research Laboratories
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Okumura Hajime
Electrotechnical Laboratory
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GIKAWA Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Yokoi Hideki
Department of Biochemistry, College of Agriculture, Kyoto Prefectural University
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Yokoi H
Tokyo Inst. Technol. Tokyo Jpn
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Yokoi Hideki
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Nakano Yoshiaki
Graduate School Of Engineering The University Of Tokyo
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Nonomura Hajime
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Sakurai Kazumasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kawabata Tatsuro
Ntt Basic Research Laboratories Ntt Corp.
著作論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs(Photonic Crystals and Their Device Applications)
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- A Method of Polarization Stabilization in Surface Emitting Lasers
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Numerical Simulation of Readout Using Optical Feedback in the Integrated Vertical Cavity Surface Emithing Laser Microprobe Head
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition