OKUMURA Hajime | National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C

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概要

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著作論文

AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
Effects of High-k Passivation Films on AlGaN/GaN HEMT
p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy
Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging

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