Shimizu M | Advanced Industrial Science And Technology (aist) Power Electronics Research Center
スポンサーリンク
概要
関連著者
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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SHIMIZU Masaru
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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舟窪 浩
東京工業大学大学院 総合理工学研究科 物質科学創造専攻
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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FUJISAWA Hironori
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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清水 勝
兵庫県立大学大学院 工学研究科
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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Niu Hirohiko
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Suzuki Y
Showa Shell Sekiyu K.k. Kanagawa
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KOKUGAN Takao
Department of Chemical Engineering, Tokyo University of Agriculture and Technology
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Suzuki Y
Hitachi Ltd. Tokyo Jpn
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SAWAI Jun
Department of Applied Chemistry, Kanagawa Institute of Technology
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Suzuki Y
Optoelectronic Division Electrotechnical Laboratory
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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藤沢 浩訓
兵庫県立大学大学院 工学研究科
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岡庭 守
姫路工業大学大学院工学研究科
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IDE Toshihide
Department of Electronics and Communications, School of Science and Technology, Meiji University
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SHIMIZU Mitsuaki
Optoelectronic Division, Electrotechnical Laboratory
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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本田 耕一郎
富士通研究所
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本田 耕一郎
富士通研
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松重 和美
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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Hara S
Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P
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SUZUKI Yoshihiro
Optoelectronic Division, Electrotechnical Laboratory
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NEMOTO Toshio
Department of Electronics and Communications, School of Science and Technology, Meiji University
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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SHIMIZU Mitsuaki
Electrotechnical Laboratory (ETL)
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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野々村 哉
姫路工業大学大学院工学研究科電気系工学専攻
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堀内 敏行
東京電機大学工学部
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HONDA Koichiro
Fujitsu Laboratories Ltd.
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野々村 哉
姫路工業大学大学院工学研究科 電気系工学専攻
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Mukai S
Optoelectronic Division Electrotechnical Laboratory
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Arima H
Mitsubishi Electric Corp. Hyogo Jpn
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Arima Hideaki
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Honda Koichiro
Fujitsu Lab. Ltd. Kanagawa Jpn
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Honda K
Fujitsu Laboratories Ltd.
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MUKAI Seiji
Optoelectronic Division, Electrotechnical Laboratory
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WATANABE Masanobu
Optoelectronic Division, Electrotechnical Laboratory
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Mukai S
Electrotechnical Lab. Ibaraki Jpn
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Mukai Seiji
Optoelectronic Division Electrotechnical Laboratory
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SHEN Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SUZUKI Akira
Graduate School of Engineering, Tokai University
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SHEN Xu-Qiang
Electrotechnical Laboratory (ETL)
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IDE Toshihide
Electrotechnical Laboratory (ETL)
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HARA Shiro
Electrotechnical Laboratory (ETL)
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SONODA Saki
ULVAC JAPAN, Ltd,
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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TAKAHASHI Kenji
Department of Radiological Life Sciences, Hirosaki University Graduate School of Health Sciences
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Matsuura Osamu
Department Of Urology Shakai Hoken Chukyo Hospital
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Matsuura Osamu
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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KOTAKA Yasutoshi
Fujitsu Laboratories Ltd.
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藤沢 浩訓
姫路工大・工学研究科
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清水 勝
姫路工大・工学研究科
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HONDA Kazutaka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Katoda Takashi
Dep. Of Electronic And Photonic Systems Engineering Kochi Univ. Of Technol.
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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SAITO Keisuke
Application Laboratory
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Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corp.
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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MATSUSHIGE Kazumi
Department of Electronic Science and Engineering, Kyoto University
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HORIUCHI Toshihisa
Department of Electric Science and Engineering, Graduated School of Kyoto University
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Shiosaki Tadashi
Department of Electronic, Faculty of Engineering, Kyoto University
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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Cho D‐h
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OHASHI Hiromichi
National Institute of Advanced Industrial Science and Technology
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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HIRATA Yoshitaka
Department of Science and Technology, Graduated School of Meiji University
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PIAO Guanxi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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CHO Sung-Hwan
Electrotechnical Laboratory (ETL)
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HASAMA Toshifumi
Optoelectronic Division, Electrotechnical Laboratory
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MATSUZAKI Tomoaki
Department of Applied Chemistry Faculty of Engineering, Himeji Institute of Technology
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Nakamura Takashi
Rohm Co. Ltd.
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塩嵜 忠
奈良先端科学技術大学院大学物質創成科学研究科
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TAKANO Mikio
Institute for Chemical Research, Kyoto University
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AZUMA Masaki
Institute for Chemical Research, Kyoto University
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SHIMAKAWA Yuichi
Institute for Chemical Research, Kyoto University
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近藤 和夫
岡山大学工学部
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田中 善之助
岡山大学工学部
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渡辺 和人
都立産技高専
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山崎 貴司
富士通研究所
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小高 康稔
富士通研究所
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KURI Ryohei
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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山崎 貴司
東理大理
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渡辺 和人
産業技術高専
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藤沢 浩訓
兵庫県大
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清水 勝
兵庫県大
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻
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NONOMURA Hajime
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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丹生 博彦
姫路工大・工学研究科
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田中 善之助
岡山大学工学部物質応用化学科
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小高 康稔
東大工
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BALAKRISHNAN K.
静岡大
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Balakrishnan K.
静岡大学電子工学研究所
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松岡 裕益
姫路工業大学工学部電子工学科
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Balakrishnan Krishnan
名城大学理工学部材料機能工学科
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FUJII Satoshi
Department of Neurosurgery, Yokohama City University School of Medicine
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村田 周平
姫路工業大学工学部電子工学科
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板東 達也
姫路工業大学工学部電子工学科
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Nishida Takashi
Department of Biochemistry and Molecular Dentistry, Okayama University Graduate School of Medicine a
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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八木 達也
姫路工業大学大学院工学研究科電気系工学
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Kawada Emiko
Department Of Chemical Engineering Division Of Applied Chemistry Tokyo University Of Agriculture &am
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Mitsui T
Crest Japan Science And Technology Agency:japan Atomic Energy Agency
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INUISHI Masahide
the ULSI Development Center, Mitsubishi Electric Corporation
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Horiuchi T
東京電機大
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MORIMOTO Koji
Department of Breast and Endocrine Surgery, Osaka University Graduate School of Medicine
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Kuri Ryohei
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Takano M
Institute For Chemical Research Kyoto University
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Takano Mikio
Institute For Integrated Cell-material Sciences Kyoto University
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Takano Mikio
Institute For Chemical Research (icr) Kyoto University
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Morimoto Koji
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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OGURA Mutsuo
Optoelectronic Division, Electrotechnical Laboratory
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KIKUCHI Takuya
Course of Electronics, Graduate School of Engineering, Tokai University
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KAJI Ryosaku
Optoelectronic Division, Electrotechnical Laboratory
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ITOH Hideo
Optoelectronic Division, Electrotechnical Laboratory
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YAJIMA Hiroyoshi
Optoelectronic Division, Electrotechnical Laboratory
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Nishida T
Nara Inst. Sci. And Technol. Nara Jpn
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K バラクリシュナン
静岡大学電子工学研究所
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OKINO Hirotake
Department of Communications Engineering, National Defense Academy
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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OIKAWA Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Azuma M
Institute For Chemical Research Kyoto University
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Azuma Masaki
Institute For Chemical Research Kyoto University
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KANEKO Satoru
Kanagawa Industrial Technology Research Institute
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SAKAMA Hiroshi
Department of Applied Physics, The University of Tokyo
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HARA Shinji
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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CHO Dong-Hyun
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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JEGANATHAN Kulandaivel
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHEN Xu-Qiang
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OOKITA Hideyuki
Science University of Tokyo
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ICHIKAWA Noriya
Department of Physics, Sophia University
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ARAI Masaya
Department of Physics, Sophia University
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IMAI Yusuke
Department of Physics, Sophia University
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HAGIWARA Kei
Department of Physics, Sophia University
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YONETANI Masashi
Graduate School of Engineering, University of Hyogo
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FUJISAWA Hironori
Graduate School of Engineering, University of Hyogo
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SHIMIZU Masaru
Graduate School of Engineering, University of Hyogo
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ISHIKAWA Kenya
Research Institute of Electrical Communication, Tohoku University
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CHO Yasuo
Research Institute of Electrical Communication, Tohoku University
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松重 和美
京都大学工学研究科電子物性工学専攻
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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YAMAMOTO Yuki
National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
National Institute of Advanced Industrial Science and Technology
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YAGI Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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INADA Masaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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PIAO Guanxi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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ARAI Kazuo
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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CHO Hyung-Koun
Department of Metallurgical Engineering, Dong-A University
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
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SHEN Xu-Qiang
New Energy and Industrial Technology Development Organization (NEDO)
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IDE Toshihide
Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji Un
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SUZUKI Akira
Course of Electronics, Graduate School of Engineering, Tokai University
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SHEN Xu-Qiang
Optoelectric Division, Electrotechnical Laboratory
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OKUMURA Hajime
Optoelectric Division, Electrotechnical Laboratory
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NEMOTO Toshio
Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji Un
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SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
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SAWADA Tatsuya
Department of Applied Chemistry Faculty of Engineering. Himeji Institute of Technology
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NINESHIGE Atsushi
Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
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Shimakawa Yuichi
Institute For Chemical Research Kyoto University
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SHIOSAKI Tadashi
Graduate School of Materials Science, Nara Institute of Science and Technology
著作論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- I層にMgOを用いたMIS及びMFIS構造の作製とその評価
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
- Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
- Electrical Properties of LiNbO_3 Thin Films by RF Magnetron Sputtering and Bias Sputtering
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- DETECTION OF ACTIVE OXYGEN GENERATED FROM CERAMIC POWDERS HAVING ANTIBACTERIAL ACTIVITY
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- High-Speed Convolution System for Real-Time Proximity Effect Correction
- Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method
- Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- EFFECT OF PARTICLE SIZE AND HEATING TEMPERATURE OF CERAMIC POWDERS ON ANTIBACTERIAL ACTIVITY OF THEIR SLURRIES
- EFFECT OF CERAMIC POWDER SLURRY ON SPORES OF BACILLUS SUBTILIS
- MUTAGENICITY TEST OF CERAMIC POWDER WHICH HAVE GROWTH INHIBITORY EFFECT ON BACTERIA
- INJURY OF Escherichia coli IN PHYSIOLOGICAL PHOSPHATE-BUFFERED SALINE INDUCED BY FAR-INFRARED IRRADIATION
- EVALUATION OF GROWTH INHIBITORY EFFECT OF CERAMICS POWDER SLURRY ON BACTERIA BY CONDUCTANCE METHOD
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- Thermally Stimulated Current and Polarization Fatigue in Pb (Zr, Ti) O_3 Thin Films
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V 及び DLTS法による界面準位密度の測定
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Step Coverage Characteristics of Pb(Zr, Ti)O_3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
- プラズマCVD法によるZnO透明導電薄膜
- Effects of Oxygen Concentration on Growth of Bi_4Ti_3O_ Thin Films by Metalorganic Chemical Vapor Deposition ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dependence of Crystalline Structure and Lattice Parameters on Film Thickness in PbTiO_3/Pt/MgO Epitaxial Structure
- Thermal Effects in Properties of Photovoltaic Currents of Pb(Zr, Ti)O_3 Thin Films
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- MOCVD法のよるPb(Zr,Ti)O_3(PZT)系薄膜の成長
- MOCVD法による強誘電体Pb(Zr, Ti)O_3薄膜の諸特性とメモリーデバイスへの応用
- Control of Orientation of Pb(Zr, Ti)O_3 Thin Films Using PbTiO_3 Buffer Layer ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effects of O_3 on Growth and Electrical Properties of Pb(Zr, Ti)O_3 Thin Films by Photoenhanced Metalorganic Chemical Vapor Deposition ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)