OKUMURA Hajime | Electrotechnical Laboratory (ETL)
スポンサーリンク
概要
関連著者
-
OKUMURA Hajime
Electrotechnical Laboratory (ETL)
-
Okumura Hajime
Electrotechnical Laboratory
-
Okumura H
Electrotechnical Lab. Ibaraki Jpn
-
Okunuma H
National Institute Of Advanced Industrial Science And Technology
-
Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
-
YOSHIDA Sadafumi
Electrotechnical Laboratory
-
Okumura Hajime
Nakano Central Research Institute Nakano Vinegar Co. Ltd.
-
Yoshida S
The Second Department Of Internal Medicine Chiba University School Of Medicine
-
Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
著作論文
- First-Principles Study on Piezoelectric Constants in Strained BN, AlN, and GaN
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices