Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Daimon Hiroshi
Graduate School Of Material Science Nara Advanced Institute Of Science And Technology
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Daimon Hiroshi
Electrotechnical Laboratory
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Daimon Hiroshi
Department Of Material Physics Faculty O Engineering Science Osaka University
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ENDO Kazuhiro
Electrotechnical Laboratory
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Nakano Central Research Institute Nakano Vinegar Co. Ltd.
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Okumura Hajime
Electrotechnical Laboratory
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Endo Ken
Department Of Chemistry Sophia University
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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SHINOHARA Mikiya
Electrotechnical Laboratory
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YAMANAKA Mitsugu
Electrotechnical Laboratory
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SAKUMA Eiichiro
Electrotechnical Laboratory
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MISAWA Shunji
Electrotechnical Laboratory
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Endo K
Department Of Chemistry Sophia University
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Yoshida S
The Second Department Of Internal Medicine Chiba University School Of Medicine
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Misawa S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Shinohara M
Shimadzu Corporation
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
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Yoshida S
Sharp Corp. Nara Jpn
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Endo Katsumi
Department of Chemistry, Sophia University
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