High-Temperature Operation of Silicon Carbide MOSFET

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-02-20

著者

• Daimon Hiroshi

  Graduate School Of Material Science Nara Advanced Institute Of Science And Technology

• Daimon Hiroshi

  Electrotechnical Laboratory

• Daimon Hiroshi

  Department Of Material Physics Faculty O Engineering Science Osaka University

• HAYASHI Yutaka

  Electrotechnical Laboratory

• Hayashi Y

  Research Laboratory Of Resources Utilization Tokyo Institute Of Technology

• Ishii K

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Kondo Y

  Daido Inst. Technol. Nagoya Jpn

• YOSHIDA Sadafumi

  Electrotechnical Laboratory

• YAMANAKA Mitsugu

  Electrotechnical Laboratory

• SAKUMA Eiichiro

  Electrotechnical Laboratory

• MISAWA Shunji

  Electrotechnical Laboratory

• KONDO Yasushi

  Electrotechnical Laboratory

• TAKAHASHI Tetsuo

  Electrotechnical Laboratory

• Yoshida S

  The Second Department Of Internal Medicine Chiba University School Of Medicine

• Misawa S

  Tsukuba Institute For Super Materials Ulvac Japan Ltd.

• Ishii Ken'ichi

  Electrotechnical Laboratory

• Hayashi Y

  Univ. Tsukuba Ibaraki Jpn

• Yamanaka M

  Electron Devices Division Electrotechnical Laboratory

• Kondo Yoshitaka

  Department Of Electrical Engineering Toyota Technical College

• Yoshida S

  Sharp Corp. Nara Jpn

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