Daimon Hiroshi | Department Of Material Physics Faculty O Engineering Science Osaka University

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著作論文

Temperature-Dependent Change of Correlated Electronic States in Yb_4As_3 and Yb_4(As_Sb_x)_3 Probed by High Resolution Photoemission Spectroscopy
Electronic Structure of Ni Intercalated TiS_2 Probed by Angle Resolved and 2p Core Resonance Photoemission as Well as by 2p Core Absorption Spectroscopy
Photoemission and Absorption Spectroscopy of Mn_2Sb, MnAlGe, Mn_2As, Cr_2As and Fe_2As
Resonance Photoemission Spectroscopy of Mn_2As, Cr_2As and Fe_2As
Metastable Domain Structures of Ferromagnetic Microstructures Observed by Soft X-Ray Magnetic Circular Dichroism Microscopy
Glancing Angle Dependence of the X-Ray Emission Measured under Total Reflection Angle X-Ray Spectroscopy (TRAXS) Condition during Reflection High Energy Electron Diffraction Observation
New Models for the 7×7,5×5,2×8 Structures on Si(111) and Ge(111) Surfaces
Symmetry Analysis of the Fermi Surface States of Sr_2RuO_4 by Display-Type Photoelectron Spectroscopy
Characterization of Electronic States Using a Polarized Light and a Display Analyzer (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
Photon-Stimulated Desorption Mechanism of Cl^+ Ions from Cl/Si(111) Surface
Strong Circular Dichroism in Photoelectron Diffraction from Nonchiral, Nonmagnetic Material - Direct Observation of Rotational Motion of Electrons
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
High-Temperature Operation of Silicon Carbide MOSFET
Annealing Effects on Al and AN-Si Contacts with 3C-SiC
Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)
Change of Surface Electronic States Induced by Li and K Adsorption on the Si(111)7×7 Structure
Reflection High-Energy Electron Diffraction Study of the Growth of Ge on the Ge(111) Surface
Measurement of Differential Cross Sections of Low-Energy Electrons Elastically Scattered by Gas Molecules.III.Effect of Intramolecular Double Scattering as Observed in the Scattering of 70-400 eV Electrons by Carbon Tetrachloride
Measurements of Differential Cross Sections of Low-Energy Electrons Elastically Scattered by Gas Molecules.II.Scattering of 200-500 eV Electrons by Molecular Oxygen
Ion Oxidation of Si(111)
Resonant Photoemission in Open and Closed 3d Shell Systems:Ni_xSi (x=3,2.5,2,1.5,1,and 0.5)

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