Ion Oxidation of Si(111)
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概要
- 論文の詳細を見る
The origin of the promotion of oxidation when an ion gauge is turned on during oxygen exposure on cleaved Si(111) was studied by photoemission (hv=55, 130eV). The reactivity in the oxide formation of ions, neutral excited species, and ground state oxygen molecules has been measured. The origin of the promotion of oxidation was attributed to ions, and the efficiency in the oxide formation of ions has been found to the greater than that expected from the amount of incident ions.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Daimon Hiroshi
Department Of Material Physics Faculty O Engineering Science Osaka University
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DAIMON Hiroshi
the Institute for Solid State Physics,The University of Tokyo
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MURATA Yoshitada
The Institute for Solid State Physics,The University of Tokyo
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Murata Y
Osaka Prefectural College Of Technology
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Daimon Hiroshi
The Institute For Solid State Physics The University Of Tokyo
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Murata Yoshitada
The Institute For Solid State Physics The University Of Tokyo
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MURATA Yoshitada
The Institute for Solid State Physics, The University of Tokyo
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