New Models for the 7×7,5×5,2×8 Structures on Si(111) and Ge(111) Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
On the basis of a detailed analysis of RHEED intensity distribution alongreciprocal lattice rods taken from the Sill II )7 x 7 structure, a new structure modelhas been obtained. The structure consists of twelve raised atoms and a vacancy inthe unit mesh. The raised atoms are arranged in regular triangular forms withside 2a, a being the size of the bulk unit mesh and they can be classified into fourkinds of atoms A, B, C and D. Among their heights of the displacements Z., Z., Z(and Z., an inequality Z.>Z.>Z(>Z. has been consequently obtained. TheGe(l l 1)7 x 7-Sn surface has an identical structure with the Sill 1 ])7 x 7. Similarlythe Ge(1 11)2 x 8 structure consists of two of them, A and B, and the Gall 11)5 x5-Sn and Sill 11)5 x 5-Ge three of them, C, D and a vacancy.
- 社団法人日本物理学会の論文
- 1984-06-15
著者
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Daimon Hiroshi
Graduate School Of Material Science Nara Advanced Institute Of Science And Technology
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Daimon Hiroshi
Electrotechnical Laboratory
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Daimon Hiroshi
Department Of Material Physics Faculty O Engineering Science Osaka University
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HANADA Takashi
Department of Radiology, Tokyo Medical Center, National Hospital Organization
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Hanada T
Tokyo Univ. Agriculture Tokyo Jpn
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INO Shozo
Department of Physics, Faculty of Science, University of Tokyo
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Ino Shozo
Department Of Physics Faculty Of Science University Of Tokyo
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Daimon Hiroshi
Department Of Chemistry Faculty Of Science The University Of Tokyo
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Hanada Takashi
Department Of Fermentation Science Tokyo University Of Agriculture:(present Address)research Center
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