Observation of the Plasmon Excitation in a Cs Overlayer on Si(100) 2×1
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概要
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Angle-integrated low-energy electron-energy-loss spectroscopy (EELS) wasmeasured as a function of coverage for studying electronic excitations in Cs atomsdeposited onto a clean Si(100) 2 x I surface and simultaneously AES, LEED, Ac7t,and UPS were observed. The energy loss peak (l eV) in the EEL spectrum appearswith large intensity at the saturation coverage of a half monolayer and is notobserved at lower coverages. This energy loss is assigned to the plasmon excita-lion in Cs overlayer on silicon as observed in alkali atoms on noble and transitionmetals. It is suggested that the observed plasmon excitation in Cs atoms has aone-dimensional character from the standpoint of the geometrical model proposedby Levine [J. D. Levine: Surf. Sci. 34 (1973) 9011, where Cs atoms form one-dimensional chains on the raised site at a half monolayer.
- 社団法人日本物理学会の論文
- 1982-09-15
著者
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TOCHIHARA Hiroshi
The Institute for Solid State Physics,The University of Tokyo
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Tochihara Hiroshi
The Institute For Solid State Physics The University Of Tokyo
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Murata Yoshitada
The Institute For Solid State Physics The University Of Tokyo
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