YOSHIDA Sadafumi | Electrotechnical Laboratory

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概要

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著作論文

Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
High-Temperature Operation of Silicon Carbide MOSFET
Annealing Effects on Al and AN-Si Contacts with 3C-SiC
Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
Preparation of As-Deposited Bi-Sr-Ca-Cu-O Films with High T_c Superconducting Phase by Metalorganic Chemical Vapor Deposition
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC
Fabrication and High-Field Magneto-Absorption Study of CdTe/Cd_Mn_xTe Multiple Quantum Wells
Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
Superconducting Current Density Profiles Estimated from the Flux Density Distribution in YBa_2Cu_3O_x Thin Films
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs
Solid State Reaction of Mo on Cubic and Hexagonal SiC
Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC

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