C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Nakano Central Research Institute Nakano Vinegar Co. Ltd.
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Okumura Hajime
Electrotechnical Laboratory
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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MISAWA Shunji
Electrotechnical Laboratory
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Yoshida S
The Second Department Of Internal Medicine Chiba University School Of Medicine
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Misawa S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Shinohara M
Shimadzu Corporation
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SHINOHARA Mikiya
Scientific Research Laboratory, Nissan Motor Co., Ltd.
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YAMANAKA Mitsugu
Scientific Research Laboratory, Nissan Motor Co., Ltd.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
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Yoshida S
Sharp Corp. Nara Jpn
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Yamanaka Mitsugu
Scientific Research Laboratory Nissan Motor Co. Ltd.
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