Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-06-15
著者
-
Inoue N
National Defense Acad. Yokosuka Jpn
-
Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
-
Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
-
Shinohara Masanori
Ntt Lsi Laboratories
-
Inoue Naohisa
Ntt Lsi Laboratories
-
Shinohara M
Shimadzu Corporation
-
SUGIYAMA Hiroki
NTT LSI Laboratories
-
TANIMOTO Masafumi
NTT LSI Laboratories
-
Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
-
Tanimoto M
Ntt Lsi Laboratories
関連論文
- Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
- Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- A New Experimental Geometry of Elastic Recoil Detection Analysis (ERDA)
- Critical Acoustic Anomaly of a Binary Mixture of Nitroethane and Cyclohexane with Acetone Impurity in the Frequency Range of 0.3-3 MHz : Physical Acoustics
- Ultrasonic Absorption in a Binary Mixture of Nitrobenzene/n-Hexane over the Frequency Range of 0.2 MHz-3 MHz : Physical Acoustics
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
- Transport Properties in InP/InAlAs Type II Single Heterostructure
- Simple Method for Measuring the Sound Velocity of a High Absorption Liquid
- Measurement of the Virtual Mass of a Circular Cylinder Placed in a Resonance Tube at a Distance from Its Center
- Effects of Viscosity and Side Walls on the Virtual Mass of a Circular Cylinder Measured with a Resonance Tube
- Ionic Conduction and Ultrasonic Velocity in Na_Zr_Mn_x(PO_4)_3
- Electrical Impedance and Elastic Property in Na_2Zr_Mg_(PO_4)_3-Al_2O_3 Composite
- The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- Identification of Surface Atoms of LiGaO_2(001) Substrate for Hexagonal GaN Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Coaxial Impact Collision Ion Scattering Spectroscopy Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method
- C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
- Measurement of the Virtual Mass of a Body Using the Second Harmonic Resonance of a Tube
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
- Salivary Duct Carcinoma with Sebaceous Cell Differentiation arising from Parotid Gland : Histological, Immunohistochemical and Ultrastructural Analyses of a Case
- Growth Properties of Al_xGa_As Grown by MOVPE Using TEG and TMA
- Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
- Structure and Electrical Properties of Thin Ta_2O_5 Deposited on Metal Electrodes
- Properties of Highly Oriented Ta_2O_5 on Metal Electrodes
- A New Pulsed Laser Deposition Method Using an Aperture Plate
- Annealing of Excimer-Laser-Ablated BaTiO_3 Thin Films
- Deposition of BaTiO_3 Thin Films by ArF Excimer Laser Ablation
- Efficient Light Deflection of a Narrow Guided Beam in LiNbO_3 Using Two SAW Pulses
- n-InSb Point Contact Warm Carrier Infrared Laser Detectors : Waves, Optics and Quantum Electronics
- A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic Field : Semiconductors and Semiconductor Devices
- Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy
- Analysis of P^+ -n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy of Cleaved Si and GaAs Surfaces in Air
- Acousto-optical Parallel-to-Serial Converter for Optical Signals
- Quantum Interferometric Spectroscopy: A Novel Technique for Nanometer-Scale Characterization of Heterostructures
- Influence of Carrier Scattering on Franz-Keldysh Effect in Near-Surface Region of n-Type GaAs
- Observation of Tunneling Electron Luminescence at Low Temperatures Using Novel Conductive Transparent Tip
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy