Deposition of BaTiO_3 Thin Films by ArF Excimer Laser Ablation
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概要
- 論文の詳細を見る
BaTiO<SUB>3</SUB> films have been deposited on a quartz substrate at various substrate temperatures by the ArF excimer laser ablation technique. Crystallization of the film deposited at substrate temperatures as low as 300°C was confirmed by X-ray diffraction analysis. The expansion velocities of the laser plume and the ablated species in the plume have also been investigated by time-resolved optical observation and spectroscopy.
- 日本真空協会の論文
- 1993-04-20
著者
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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KASHIWABARA Shigeru
Department of Electrical Engineering, The National Defense Academy
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FUJIMOTO Ryozo
Department of Electrical Engineering, Nippon Bunri University
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TOSHIMA Shigetada
Department of Electrical Engineering, The National Defense Academy
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TOYAMA Ichiro
Department of Electrical Engineering, The National Defense Academy
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Toyama Ichiro
Department Of Electrical Engineering The National Defense Academy
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Fujimoto Ryozo
Department Of Electrical Engineering Nippon Bunri University
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Toshima Shigetada
Department Of Electrical Engineering The National Defense Academy
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Kashiwabara S
National Defense Acad. Yokosuka Jpn
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Kashiwabara Shigeru
Department Of Electrical Engineering National Defense Academy
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