Photochemical Deposition of SiO2 Thin Films Using an F2 Laser
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概要
- 論文の詳細を見る
Silicon dioxide (SiO2) thin films were selectively grown on a Si surface where an F2 laser beam was illuminated. The source species of the films were supplied by gaseous molecules generated by F2 laser irradiation of silicone rubber. The laser beam with a fluence below the ablation threshold was used to generate the molecules and to decompose them photochemically near the substrate. The deposited SiO2 films had a homogeneous composition and no carbon contamination. The SiO2 films were grown not only on the Si, but also on Ge substrates.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-01
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Takao Hiromitsu
Department Of Electrical And Electronic Engineering National Defense Academy
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