Pulsed Laser Deposition of SiO_2 Thin Films with Dimethylpolysiloxane Targets
スポンサーリンク
概要
- 論文の詳細を見る
SiO_2 thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of dimethylpolysiloxane in oxygen atmosphere. Only the side chains (-CH_3) of the target were photodissociated during ablation to deposit Si-O bonds on a substrate in a high laser fluence of about 10J/cm^2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to form SiO_2 thin films at the gas pressure of 4.4 × 10^<-2> Torr, in addition to reducing the isolated carbon mixed into the films. The transmittance of the 400-nm-thick films was 95% at a 500nm wavelength. The refractive index of the films was defined as 1.416 at a wavelength of 633nm. The chemical composition was also confirmed to be SiO_2 by X-ray photoelectron spectroscopy. No smooth and dense film was observed by a scanning electron microscope. Electrical resistivity of 10^7Ωm was obtained. [DOI: 10.1143/JJAP.41.1395]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
-
Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
-
Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
-
OKOSHI Masayuki
Department of Electrical and Electronic Engineering, National Defense Academy
-
Okoshi M
Department Of Electrical And Electronic Engineering National Defense Academy
-
Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
-
KURAMATSU Masaaki
Department of Electrical and Electronic Engineering, National Defense Academy
-
Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
-
Kuramatsu Masaaki
Department Of Electrical And Electronic Engineering National Defense Academy
関連論文
- Refractive Index Control of SiO_2 Films by Pulsed Laser Deposition with Silicone Targets
- Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
- Properties of (Hg_Re_)Ba_2CaCu_2Oy Grain Boundary Junctions on SrTiO_3 and (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates with Different Misorientation Angles
- Photochemical Modification of Silicone Films Using F_2 Laser for Selective Chemical Etching
- Pulsed Laser Deposition of Polymethylphenylsilane Films by Optical-Parametric-Amplified Femtosecond Laser Pulses
- Pulsed Laser Deposition of Corrosion-Resistant Iron Thin Films
- An Analysis of EBIC Response of ITO/poly-Si Solar Cells : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates
- A New Pulsed Laser Deposition Method Using an Aperture Plate
- Annealing of Excimer-Laser-Ablated BaTiO_3 Thin Films
- Deposition of BaTiO_3 Thin Films by ArF Excimer Laser Ablation
- Thin Film Deposition of Photoluminescent Silicone Rubber by Pulsed Laser Deposition
- Photocatalytic TiO_2 Fine Particle Films Fabricated by Pulsed Laser Deposition
- Area-Selective Deposition of Diamond-Like Carbon Films onto Silicone Rubber by Femtosecond Laser
- MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
- Growth of Periodic SiO2 Nanostructures Using a 157 nm F2 Laser
- InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates
- 2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates
- Fabrication of SiO_2-Humps on Silicone Rubber Using F_2 Laser : Optics and Quantum Electionics
- SiO_2 Humps Formed on Silicone Rubber by F_2 Laser Irradiation
- Pulsed Laser Deposition of SiO_2 Thin Films with Dimethylpolysiloxane Targets
- Laser Ablation of Silicone Rubber for Fabricating SiO_2 Thin Films : Optics and Queantum Electronics
- Comparison of Ta_2O_5 Thin Films Deposited by "Off-axis" and "On-axis" Pulsed Laser Deposition Technique
- n-InSb Point Contact Warm Carrier Infrared Laser Detectors : Waves, Optics and Quantum Electronics
- Bias Voltage Dependence of the Detected Voltage in MOM Devices
- F2 Laser Photochemical Welding of Aligned Silica Microspheres to Silicone Rubber
- Surface and Interface Modifications of Aluminum Thin Films on Silica Glass Substrate Using 157 nm F2 Laser for Selective Metallization
- Synthesis of Microcrystals from Frozen Acetone Irradiated by a Femtosecond Laser : Optics and Quantum Electronics
- Pulsed Laser Deposition of β-FeSi_2 Films
- Formation of Transparent SiO2 Protective Layer on Polycarbonate by 157 nm F2 Laser for Lightweight Automobile Window
- Controllable Change of Photoluminescence Spectra of Silicone Rubber Modified by 193 nm ArF Excimer Laser
- An Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Films : Waves, Optics and Quantum Electronics
- P-N Conversion of Poly-Ge Films Fabricated by Plasma Assisted Deposition
- CO_2 Laser Detection Using a Warm Carrier Device Fabricated by Evaporated Ge Films
- SiO2 Humps Formed on Silicone Rubber by F2 Laser Irradiation
- Formation of High-Density Dislocations and Hardening in Femtosecond-Laser-Shocked Silicon
- Laser Wavelength Dependence on Photochemical Surface and Interface Modifications of Aluminum Thin Films on Silica Glass
- Fluorine-Doped SiO2 Films Made from Silicone and Polytetrafluoroethylene Using an F2 Laser
- Improvement of Photocatalytic Efficiency of TiO2 Thin Films Prepared by Pulsed Laser Deposition
- Ablation of Silicone Rubber Using UV-Nanosecond and IR-Femtosecond Lasers
- Wavelength Dependence of Femtosecond Pulsed Laser Deposition of Zinc Oxide Films
- Microlenses Fabricated on Silicone Rubber Using F2 Laser
- Photochemical Bonding of Aligned Silica Microspheres by F2-Laser-Induced Chemical Vapor Deposition
- White-Light Emission from Silicone Rubber Modified by 193 nm ArF Excimer Laser
- Photochemical Deposition of SiO2 Thin Films Using an F2 Laser
- Photochemical Modification of Silicone Films Using F2 Laser for Selective Chemical Etching
- Photochemical Surface Modification of Silicone Rubber into Photoluminescent Material by 193 nm ArF Excimer Laser Irradiation
- Femtosecond Laser Ablation of Polyethylene
- Pulsed Laser Deposition of Polymethylphenylsilane Films by Optical-Parametric-Amplified Femtosecond Laser Pulses