2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates

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概要

• 論文の詳細を見る

• InGaAsSbN quantum well diodes operating at 2 μm wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates. The emission wavelength of the electroluminescence (EL) was as long as 2.43 μm at room temperature for the quantum well diode with 1.4% nitrogen. It was found from the temperature dependence of the EL spectrum that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.

• Japan Society of Applied Physicsの論文
• 2004-04-15

著者

• Ouchi Kazuhiro

  Research Institute Of Advanced Technology Akita Prefectural R & D Center:faculty Of Systems Scie

• Kawamura Yuichi

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• INOUE Naohisa

  Research Institute for Advanced Science and Technology, Osaka Prefecture University

• Kawamura Yuichiro

  Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University

• Inoue N

  Department Of Electrical And Electronic Engineering National Defense Academy

• Inoue Naohisa

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• AMANO Masanobu

  Research Institute for advanced Science and Technology, Osaka Prefecture University

• Amano M

  Toshiba Corp. Kawasaki Jpn

• Amano Masanobu

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Inoue Narumi

  Superconductivity Research Laboratory International Superconductivity Technology Center

• KAWAMURA Yuichi

  Frontier Science Innovation Center Osaka Prefecture University

• NAKAGAWA Tomokatsu

  Frontier Science Innovation Center Osaka Prefecture University

• Nakagawa Tomokatsu

  Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho,

• Ouchi Kazuhiro

  Research Institute For Advanced Science And Technology Osaka Prefecture University

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