MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kawamura Yuichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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NAKAGAWA Tomokatsu
Frontier Science Innovation Center Osaka Prefecture University
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INOUE Naohisa
Frontier Science Innovation Center Osaka Prefecture University
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