NAKAGAWA Tomokatsu | Frontier Science Innovation Center Osaka Prefecture University

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概要

• NAKAGAWA Tomokatsuの詳細を見る
• 同名の論文著者
• Frontier Science Innovation Center Osaka Prefecture Universityの論文著者

関連著者

• KAWAMURA Yuichi

  Frontier Science Innovation Center Osaka Prefecture University

• NAKAGAWA Tomokatsu

  Frontier Science Innovation Center Osaka Prefecture University

• INOUE Naohisa

  Frontier Science Innovation Center Osaka Prefecture University

• Kawamura Yuichiro

  Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University

• Inoue N

  Department Of Electrical And Electronic Engineering National Defense Academy

• Inoue Narumi

  Superconductivity Research Laboratory International Superconductivity Technology Center

• Ouchi Kazuhiro

  Research Institute Of Advanced Technology Akita Prefectural R & D Center:faculty Of Systems Scie

• Kawamura Yuichi

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• INOUE Naohisa

  Research Institute for Advanced Science and Technology, Osaka Prefecture University

• Inoue Naohisa

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• AMANO Masanobu

  Research Institute for advanced Science and Technology, Osaka Prefecture University

• Amano M

  Toshiba Corp. Kawasaki Jpn

• Amano Masanobu

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Nakagawa Tomokatsu

  Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho,

• Ouchi Kazuhiro

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Inoue Naohisa

  Frontier Science Innovation Center Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan

• Kawamura Yuichi

  Frontier Science Innovation Center Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan

• Inoue Naohisa

  Frontier Science Innovation Center, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan

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著作論文

• MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
• InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates
• 2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates
• Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2 μm Wavelength Region Grown on InP Substrates
• Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates
• InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates

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