InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates
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概要
- 論文の詳細を見る
InAsSbN quantum well laser diodes operating at a 2-μm-wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates. The emission wavelength of the electroluminescence (EL) was as long as 2.51 μm at room temperature. In addition, laser operation at 2.31 μm was obtained at 190 K without postgrowth thermal annealing, where the threshold current density was 4.1 KA/cm2 and the $T_{0}$ value estimated for the temperature range from 50 to 190 K was 60 K.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-08-10
著者
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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NAKAGAWA Tomokatsu
Frontier Science Innovation Center Osaka Prefecture University
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INOUE Naohisa
Frontier Science Innovation Center Osaka Prefecture University
関連論文
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- MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
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- Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates
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