Molecular Beam Epitaxial Growth and Characterization of GaAs_<1-y>Sb_y Layers on (111)B InP Substrates
スポンサーリンク
概要
- 論文の詳細を見る
GaAs_<1-y>Sb_y layers were grown on (111)B-oriented InP substrates by molecular beam epitaxy (MBE), and their electrical and optical properties were characterized. It was found that the Sb mole fraction of the (111)B samples is larger than that of the (100) samples. The surface morphology of the (111)B samples was very sensitive to the V/III ratio, compared to that of the (1OO) samples. Furthermore, the band-gap energy of the (111)B sample was found to be larger than that of the (100) sample from the photoluminescence and optical absorption measurernents. The mechanism of the band-gap energy shift was discussed based on the spontaneous ordering of alloys.
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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INOUE Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Kawamura Yuichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Takasaki Hideki
Research Institute For Advanced Science And Technology Osaka Prefecture University
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HIGASHINO Toshiyuki
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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FUJIMOTO Masato
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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KONDO Atsushi
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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Kondo Atsushi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Fujimoto Masato
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Higashino T
Research Institute For Advanced Science And Technology Osaka Prefecture University
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