Effect of Sb Incorporation on Electroluminescence of InGaAsSbN Quantum Well Diodes Grown on GaAs Substrates
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概要
- 論文の詳細を見る
The effect of Sb incorporation on the electroluminescence of InGaAsSbN quantum well (QW) diodes grown on GaAs substrates was studied. It was found that localized levels were formed for the QW diodes with a small amount of Sb (0.5%). On the other hand, the localized levels disappeared for the QW diodes with an Sb amount of 2.5%, suggesting that the addition of a sufficient number of Sb atoms is very effective for suppressing the localized level formation. The annealing effect was also examined for the localized levels.
- 2008-08-25
著者
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Nishino Masatsugu
Research Institute for Advanced Science and Technology, Osaka Prefecture University, Sakai 599-8570, Japan
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