Photoreflectance Characterization of Ordered/Disordered GaAs0.5Sb0.5 layers Grown on InP Substrates by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Photoreflectance (PR) measurement was carried out for ordered/disordered GaAs0.5Sb0.5 layers grown on (001) InP and (111)B InP substrates by molecular beam epitaxy. A marked band-gap reduction and valence-band splitting due to point-group symmetry breaking was observed for the ordered GaAs0.5Sb0.5 layer grown on (001) InP, but not for the disordered GaAs0.5Sb0.5 layer grown on (111)B InP. The result of the PR measurement is in agreement with that of the optical absorption measurement.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-07-15
著者
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Ouchi Koichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Amano Masanobu
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Inoue Naohisa
Research Institute for advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570 Japan
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Kawamura Yuichi
Research Institute for advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570 Japan
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