Electroluminescence of In_<0.53>Ga_<0.47>As/GaAs_<0.5>Sb_<0.5> Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
スポンサーリンク
概要
- 論文の詳細を見る
In_<0.53>Ga_<0.47>As/GaAs_<0.5>Sb_<0.5> type-II multiple-quantum-well (MQW) light-emitting diodes were grown on (11l)B InP mbstrates by molecular beam epitaxy. The peak wavelength of the electroluminescence (EL) was at 2.28 μm at 11 K and at 2.28 μm at 300K. It was found that the EL intensity of the type-II MQW diode on (111)B substrates was about one order of ruagnitude stronger than that on (100) InP substrates, which can be explained by the improved crystal quality of the MQW diode on the (111)B InP substrate.
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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INOUE Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Kawamura Yuichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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AMANO Masanobu
Research Institute for advanced Science and Technology, Osaka Prefecture University
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Amano M
Toshiba Corp. Kawasaki Jpn
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Amano Masanobu
Research Institute For Advanced Science And Technology Osaka Prefecture University
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HIGASHINO Toshiyuki
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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FUJIMOTO Masato
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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YOKOYAMA Takuji
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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Yokoyama Takuji
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Fujimoto Masato
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Higashino T
Research Institute For Advanced Science And Technology Osaka Prefecture University
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