HIGASHINO Toshiyuki | Research Institute for Advanced Science and Technology, Osaka Prefecture University
スポンサーリンク
概要
関連著者
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HIGASHINO Toshiyuki
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Higashino T
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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INOUE Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Kawamura Yuichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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FUJIMOTO Masato
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Fujimoto Masato
Research Institute For Advanced Science And Technology Osaka Prefecture University
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MATSUMURA Naoki
Department of Applied Physics, Hokkaido University
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GOMYO Akiko
Fundamental and Environmental Research Laboratories, NEC Corporation
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Gomyo Akiko
Fundamental Research Laboratories Nec Corporation
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Matsumura Naoki
Department Of Applied Physics Hokkaido University
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Matsumura N
Kyoto Inst. Technol. Kyoto Jpn
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Saraie J
Kyoto Inst. Of Technol. Kyoto Jpn
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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AMANO Masanobu
Research Institute for advanced Science and Technology, Osaka Prefecture University
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Amano M
Toshiba Corp. Kawasaki Jpn
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MATSUMURA Nobuo
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Matsumura Nobuo
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Amano Masanobu
Research Institute For Advanced Science And Technology Osaka Prefecture University
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SUZUKI Tohru
Photonics and Wireless Devices Research Laboratories, NEC Corporation
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FUKUSHIMA Yasumori
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Fukushima Y
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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HIGASHINO Tomohiko
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Takasaki Hideki
Research Institute For Advanced Science And Technology Osaka Prefecture University
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YOKOYAMA Takuji
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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KONDO Atsushi
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Yokoyama Takuji
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kondo Atsushi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Suzuki Tohru
Photonics And Wireless Devices Research Laboratories Nec Corporation
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Suzuki Tohru
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
著作論文
- Photo-Chemical Vapor Deposition of Al_2O_3 Thin Films with High Quantum Yield
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates