Matsumura N | Kyoto Inst. Technol. Kyoto Jpn
スポンサーリンク
概要
関連著者
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MATSUMURA Naoki
Department of Applied Physics, Hokkaido University
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Matsumura Naoki
Department Of Applied Physics Hokkaido University
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Matsumura N
Kyoto Inst. Technol. Kyoto Jpn
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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MATSUMURA Nobuo
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Matsumura Nobuo
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Saraie J
Kyoto Inst. Of Technol. Kyoto Jpn
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NAKAMURA Naoto
Department of Information Processing, Tokyo Institute of Technology
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Nakamura Nobuo
Central Research Laboratory Hitachi Ltd.
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Nakamura N
Tokyo Inst. Technol. Yokohama Jpn
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Nakamura Noboru
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Nakamura Nobuhiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Nakamura N
Department Of Information Processing Tokyo Institute Of Technology
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TSUBOKURA Mitsutaka
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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MIYAGAWA Kazuhiro
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Nakamura Nobuhiro
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University.
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Miyagawa K
Yamanashi Univ. Kofu
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Tsubokura Mitsutaka
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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HAGA Tetsuya
Department of Applied Physics, Hokkaido University
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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Haga T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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武藤 真三
山梨大学
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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Mori Tatsushi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Muto S
Kek Ibaraki
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Fukada T
Wafermasters Inc. Ca Usa
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Fukada Takashi
Wafer Masters Inc.
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Fukada Takashi
Laboratory Of Applied Molecular Biology Division Of Applied Biochemistry Graduate School Of Agricult
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Yokoyama N
Fujitsu Laboratories Ltd.
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MIYANAGI Yoichi
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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FUKADA Takashi
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Fukada Takashi
Graduate School Of Life And Environmental Sciences Osaka Prefecture Univ.
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FUKUSHIMA Yasumori
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Fukushima Y
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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MAEMURA Koichiro
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Miyanagi Yoichi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Maemura Koichiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Muto Shunichi
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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武藤 真三
山梨大学工学部
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NUMATA Ken
Kanagawa High-Technology Foundation
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YABUTA Konami
Kanagawa High-Technology Foundation
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Kataoka Mayako
Department of Applied Physics, Hokkaido University
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Muro T
Jasri Spring-8
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Nakata Y
Fujitsu Laboratories Ltd.
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Saraie Junji
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Ichikawa S
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Kataoka Mayako
Department Of Applied Physics Hokkaido University
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HIGASHINO Tomohiko
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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SHIMAKAWA Hiroyuki
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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YAMAWAKI Kenro
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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ICHIKAWA Susumu
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Ichikawa S
Baylor Coll. Medicine Tx Usa
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HIGASHINO Toshiyuki
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Yamawaki Kenro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Ichikawa Susumu
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Muto Shinzo
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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武藤 俊介
名古屋大学
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Shimakawa Hiroyuki
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Higashino T
Research Institute For Advanced Science And Technology Osaka Prefecture University
著作論文
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
- Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
- Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
- Photo-Chemical Vapor Deposition of Al_2O_3 Thin Films with High Quantum Yield
- X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
- Improvement in the Crystalline Quality of ZnSe(111) Films Grown by Molecular Beam Epitaxy Using Misoriented GaAs(111)A Substrates
- Li Planar Doping of ZnSe by Molecular Beam Epitaxy