Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-01-20

著者

• MATSUMURA Naoki

  Department of Applied Physics, Hokkaido University

• NAKAMURA Naoto

  Department of Information Processing, Tokyo Institute of Technology

• Nakamura Nobuo

  Central Research Laboratory Hitachi Ltd.

• Nakamura N

  Tokyo Inst. Technol. Yokohama Jpn

• Nakamura Noboru

  Functional Materials Research Center Sanyo Electric Co. Ltd.

• SARAIE Junji

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Matsumura Naoki

  Department Of Applied Physics Hokkaido University

• Nakamura Nobuhiro

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• Matsumura N

  Kyoto Inst. Technol. Kyoto Jpn

• Nakamura N

  Department Of Information Processing Tokyo Institute Of Technology

• Saraie J

  Kyoto Inst. Of Technol. Kyoto Jpn

• Saraie Junji

  Department Of Electronic Engineering Faculty Of Engineering Kyoto University

• MATSUMURA Nobuo

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• Matsumura Nobuo

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• TSUBOKURA Mitsutaka

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• MIYAGAWA Kazuhiro

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• Nakamura Nobuhiro

  Department Of Applied Chemistry Faculty Of Engineering Kogakuin University.

• Miyagawa K

  Yamanashi Univ. Kofu

• Tsubokura Mitsutaka

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

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