Coaxial Impact Collision Ion Scattering Spectroscopy Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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ISHIYAMA Osamu
Keihanna Research Laboratory, Shimadzu Corporation
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Saraie J
Kyoto Inst. Of Technol. Kyoto Jpn
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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SHINOHARA Makoto
Department of Pediatrics, Ashikita Institution for Developmental Disability
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Mitamura Shigehiro
Surface Analysis Research Laboratory Shimadzu Corporation
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Ohtani F
Shimadzu Corp. Kanagawa Jpn
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Ishiyama Osamu
Keihanna Research Laboratory Shimadzu Corporation
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Shinohara M
Shimadzu Corporation
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OHTANI Fumihiko
Keihanna Research Laboratory, Shimadzu Corporation
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Shinohara Makoto
Department Of Cardiology Gunma Childrens' Medical Center
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- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
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- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
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