Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiN_x Layers
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
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HARIMA Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Huang Wei
Department Of Electronics Information Science Kyoto Institute Of Technology
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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TAGUCHI Kohshi
Department of Electronics and Information Science, Teikyo University of Science and Technology
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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