Improvement in the Crystalline Quality of ZnSe(111) Films Grown by Molecular Beam Epitaxy Using Misoriented GaAs(111)A Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-01
著者
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MATSUMURA Naoki
Department of Applied Physics, Hokkaido University
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Mori Tatsushi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Matsumura Naoki
Department Of Applied Physics Hokkaido University
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Matsumura N
Kyoto Inst. Technol. Kyoto Jpn
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Saraie J
Kyoto Inst. Of Technol. Kyoto Jpn
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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MATSUMURA Nobuo
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Matsumura Nobuo
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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MAEMURA Koichiro
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Maemura Koichiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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