Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
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TAGUCHI Kohshi
Department of Electronics and Information Science, Teikyo University of Science and Technology
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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YOSHIMOTO Masahiro
Cooperative Research Center, Kyoto Institute of Technology
関連論文
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- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
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- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
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- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Surface Structure of Ion-Implanted Silica Glass
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
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- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
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- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
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- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
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- Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
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- Fabrication of 1 Inch Mosaic Crystal Diamond Wafers
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- Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
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- Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane