X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-15

著者

• MATSUMURA Naoki

  Department of Applied Physics, Hokkaido University

• Muro T

  Jasri Spring-8

• Mori Tatsushi

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• SARAIE Junji

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Matsumura Naoki

  Department Of Applied Physics Hokkaido University

• Matsumura N

  Kyoto Inst. Technol. Kyoto Jpn

• Saraie J

  Kyoto Inst. Of Technol. Kyoto Jpn

• Saraie Junji

  Department Of Electronic Engineering Faculty Of Engineering Kyoto University

• MATSUMURA Nobuo

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• Matsumura Nobuo

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• SHIMAKAWA Hiroyuki

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• MAEMURA Koichiro

  Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut

• Shimakawa Hiroyuki

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• Maemura Koichiro

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

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