Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
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概要
- 論文の詳細を見る
The mass density was evaluated by Rutherford backscattering spectroscopy for silicon nitride (SiNx) films with considerably low carbon concentration deposited from hexamethyldisilazane by the radical beam deposition method. The mass density of the film deposited at a low substrate temperature (room temperature $\sim$ 400°C) was comparable to those of conventional SiNx films deposited from SiH4. This indicates a compatibilty of the film in this work with conventional films. For the films deposited at a substrate temperature above 400°C, H and excess N were eliminated from the film, and the mass density was evaluated to be 3.2 g/cm3, which is comparable to that of Si3N4 formed by the sintering method.
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Taguchi Kohshi
Department of Electronics and Electrical Engieering, Fukuyama University
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Yoshimoto Masahiro
Cooperate Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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