Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source
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概要
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Silicon nitride (SiNx) film has been deposited at a substrate temperature in the range of 200–800°C by a new radical-beam deposition technique. In the new technique, hexamethyldisilazane is decomposed not in plasma directly, but in a reaction with atomic nitrogen, in order to reduce carbon concentration into the film. The carbon concentration of the film is estimated to be of the order of $10^{19}$ cm-3 at most, based on secondary ion mass spectroscopy. The resistivity and the dielectric constant of the film are evaluated to be $\sim 10^{13}$ $\Omega$$\cdot$cm at 3 MV/cm and 5.7 at 300 kHz, respectively, which makes the film quality comparable to that of SiNx films deposited by plasma chemical vapor deposition.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Taguchi Kohshi
Department of Electronics and Electrical Engieering, Fukuyama University
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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