Photo-CVD of Al_2O_3 Thin Films
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概要
- 論文の詳細を見る
Al_2O_3 thin films have been prepared by photo-CVD under oxygen atmosphere for the first time using aluminum-tri-isopropoxide as a source material. The light source was a low-pressure Hg lamp. Without UV irradiation the deposition rate had a maximum at a particular oxygen-flow rate, which suggests the Langmuir-Hinshelwood surface-reaction mechanism. With UV irradiation, the deposition rate increased largely at a substrate temperature of less than 300℃. The activation energy of deposition reaction was as small as 1.5 kcal/mol. It was confirmed that the 185-nm light played an important role in the photodeposition. The dielectric dissipation factor (tan δ) decreased in the samples prepared by photo-CVD, especially at a low substrate temperature of less than 300℃; that is, the film quality was improved by photo-CVD.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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NGAN Sin-fat
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Ngan Sin-fat
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Saraie Junji
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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