High Hole Mobility in GaAsxBi[x] Alloys
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
-
Yamada Kazuya
Department Of Fixed Prosthodontics Nihon University School Of Dentistry
-
Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
-
Fuyuki Takuma
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
-
Kado Kosuke
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
関連論文
- Effect of single-liquid priming agents on adhesive bonding to aluminum oxide of a methacrylic resin.
- 1.3μm Solid-State Plastic Laser in Dye-Doped Fluorinated-Polyimide Waveguide
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- EXPRESSION ANALYSIS OF EPIREGULIN AND AMPHIREGULIN IN THE RAT OVARY
- THE GENE EXPRESSION AND TRANSCRIPTIONAI ACTIVITY OF NUCLEAR RECEPTOR COACTIVATOR P120 IN RAT OVARY
- TRANSCRIPTIONAL REGULATION OF EPIREGULIN GENE IN THE RAT OVARY
- EARLY GROWTH RESPONSE GENE-1 (EGR-1) REGULATES THE EXPRESSION OF THE RAT LUTEINIZING HORMONE RECEPTOR GENE
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Anti-streptococcal Cell Membrane and Anti-human Glomerular Basement Membrane Titers in Sera of Patients with Poststreptococcal Acute Glomerulonephritis and Anaphylactoid Purpura : THE 7th CONFERENCE ON PREVENTION FOR RHEUMATIC FEVER AND RHEUMATIC HEART DI
- Low Temperature Dependence of Oscillation Wavelength in GaAs_Bi_x Laser by Photo-Pumping
- Sp Family Members Stimulate Transcription of the Hex Gene via Interactions with GC Boxes
- Genomic Organization and Promoter Analysis of a Mouse homeobox Gene, Hex
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers
- Identification and Characterization of the Hematopoietic Cell-Specific Enhancer-Like Element of the Mouse Hex Gene
- Insulin Stimulates Expression of the Pyruvate Kinase M Gene in 3T3-L1 Adipocytes(Biochemistry & Molecular Biology)
- Relationship between the Concentrations of Glycolytic Intermediates and Expression of the L-Type Pyruvate Kinase Gene in Cultured Hepatocytes
- High-Gain Optical Amplification of Europium-Aluminum (Eu^-Al)-Nanocluster-Doped Planar Polymer Waveguides
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN : Optical Properties of Condensed Matte
- New Semiconductor Alloy GaAs_Bi_x Grown by Metal Organic Vapor Phase Epitaxy
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- High-Gain Optical Amplification of Europium–Aluminum (Eu3+–Al)-Nanocluster-Doped Planar Polymer Waveguides
- Characteristics of Semiconductor Alloy GaAs_Bi_x
- Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- High Hole Mobility in GaAsxBi[x] Alloys
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- Near Infrared Light Amplification in Dye-Doped Polymer Waveguide
- New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
- Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
- Scanning Photoluminescence Microscope with Sub-micron Resolution and High Optical Throughput at a Low Temperature
- Fiber-to-Fiber Optical Gain of Polymer-Based Amplifier with Self-Written Active Waveguide
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements
- Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source
- Direct Observation of Polytype Domains in GaN using a Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution
- Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
- Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy
- Anisotropic Optical Transitions in [110]-Oriented Semiconductor Quantum Well Studied by Photoreflectance Spectroscopy
- Optical Amplification in Organic Dye-doped Polymeric Channel Waveguide under CW Optical Pumping
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiNx Layers
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy