Anisotropic Optical Transitions in [110]-Oriented Semiconductor Quantum Well Studied by Photoreflectance Spectroscopy
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概要
- 論文の詳細を見る
We have experimentally investigated optical anisotropy in [110]-oriented multiple quantum well, which is considered to be an important structure for novel quantum devices. By employing polarized photoreflectance spectroscopy, the anisotropies of in-plane optical transition matrix element were clearly observed for higher-order interband transitions as well as the band-edge transition. The degree of polarization depends on the quantum-well width and the order of quantum level related to the transition. The experimental results qualitatively agree with those of a numerical calculation based on the Luttinger–Kohn Hamiltonian.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
-
Yamashita Kenichi
Department Of Applied Chemistry School Of Engineering Kyushu University
-
Asai Hiromitsu
Ntt Photonics Laboratory
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