Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy
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概要
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We performed photoreflectance (PR) spectroscopy in order to investigate the fundamental band gap of GaAs1-xBix alloys. The temperature dependence of the band gap energy was evaluated by analyzing of the Franz–Keldysh oscillation in the PR spectra. With increasing Bi content, the band gap energy of GaAs1-xBix alloy is reduced, which shows a large optical bowing. The temperature coefficient of the band gap decreases appreciably in alloys with increasing Bi content. For $x=0.026$, the temperature coefficient near room temperature is $-0.15$ meV/K which is 1/3 of the value for GaAs.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
-
Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yoshida Junichi
Department Of Cardiovascular Medicine Osaka University Graduate School Of Medicine
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Oe Kunishige
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Yoshida Junichi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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