Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
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概要
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We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be ${\sim}700$ °C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of ${\sim}27$ meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.
- Japan Society of Applied Physicsの論文
- 2007-08-25
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Oe Kunishige
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Feng Gan
Cooperative Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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