Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Lattice distortion in GaAsP layers has been studied using high-resolution X-ray diffractometry. GaAsP layers were grown on GaP and Si substrates by metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEGa), tertiarybutylarsine (TBAs) and phosphine (PH3) as source gases. The lattice constants of epitaxial layers were obtained from the results of X-ray (004) and (115) diffraction. The lattice constant parallel to the growth surface ($a_{\|}$) was longer than the one perpendicular to the surface ($a_{\bot}$). The GaAsP epi-layer was two-dimensionally strained in the growth plane. This is explained by the difference of thermal expansion coefficients. The distortion in the GaAsP epi-layers on a GaP substrate was smaller than that on a Si substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-15
著者
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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HASHIMOTO Tetsutaro
Department of Electronic Science and Engineering, Kyoto University
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Yasui Toshiyuki
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Kazuhiro
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Nakamura Kazuhiro
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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Yasui Toshiyuki
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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Hashimoto Tetsutaro
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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