Annealing Effect on Enlargement of Grain Size in Nanocrystalline Silicon Films Deposited by Silicon Evaporation with Oxygen and Argon Radicals

概要

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Nanocrystalline silicon films were deposited by silicon evaporation in an ultrahigh vacuum with oxygen and argon radicals. The oxygen ratios (O2/(O2+Ar)) in the source gases for the deposition of silicon films were 100, 50, 20 and 5%. The deposited films were annealed at temperatures between 900 and 1100°C for 30 min in oxygen ambient. The films were characterized by X-ray diffractometry (XRD). The grain size of the nanocrystalline silicon was determined using the full-width at half maximum (FWHM) of XRD spectra. The grain size in the films became larger with increasing annealing temperature regardless of the oxygen ratio in the source gases. The enlargement of the grain size was caused by the crystallization of the amorphous silicon region in the deposited films during the annealing process. On the other hand, the grain size became smaller with increasing oxygen ratio in the source gases when compared at the same annealing temperature. It can be concluded that the large amount of oxygen atoms or radicals incorporated in the deposited films suppressed the enlargement of the grain size during annealing.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-01-15